ZXTD2090E6 document number ds31896 rev. 2 - 2 1 of 6 www.diodes.com august 2009 ? diodes incorporated a product line o f diodes incorporated z x td2090e6 dual 50v npn silicon low saturation switching transistor features ? bv ceo = 50v ? r sat = 160mv ? i c = 1a continuous collector current ? low equivalent on resistance ? low saturation voltage ? sot23-6 package ? lead, halogen and antimony free, rohs compliant (note 1) ? ?green? devices (note 2) applications ? lcd backlighting inverter circuits ? boost functions in dc-dc converters mechanical data ? case: sot23-6 ? case material: molded plasti c. ?green? molding compound. ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish ? weight: 0.018 grams (approximate) ordering information product marking reel size (inches) tape width (mm) quantity per reel ZXTD2090E6ta 2090 7 8 3000 notes: 1. no purposefully added lead. halogen and antimony free. 2. diodes inc.?s ?green? policy can be f ound on our website at http://www.diodes.com. marking information 2090 = product type marking code top view device symbol pin configuration sot-223
ZXTD2090E6 document number ds31896 rev. 2 - 2 2 of 6 www.diodes.com august 2009 ? diodes incorporated a product line o f diodes incorporated z x td2090e6 dual 50v npn silicon low saturation switching transistor maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v continuous collector current (note 5) i c 1 a base current i b 200 ma peak pulse current i cm 2 a thermal characteristics characteristic symbol value unit power dissipation at t a = 25 c (notes 3 & 6) linear derating factor p d 0.90 7.2 w mw / c power dissipation at t a = 25 c (notes 3 & 7) linear derating factor p d 1.1 8.8 w mw / c power dissipation at t a = 25 c (notes 4 & 6) linear derating factor p d 1.7 13.6 w mw / c thermal resistance, junction to ambient (notes 3 & 6) r ja 139 c/w thermal resistance, junction to ambient (notes 4 & 6) r ja 73 c/w thermal resistance, junction to ambient (notes 3 & 7) r ja 113 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 3. for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1 oz copper, in still air cond itions 4. for a device surface mounted on fr4 pcb measured at < 5sec 5. repetitive rating ? pulse width limited by maximum j unction temperature. refer to transient thermal impedance graph 6. for a device with one active die 7. for a device with two die running at equal power
ZXTD2090E6 document number ds31896 rev. 2 - 2 3 of 6 www.diodes.com august 2009 ? diodes incorporated a product line o f diodes incorporated z x td2090e6 dual 50v npn silicon low saturation switching transistor electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage v ( br ) cbo 50 v i c = 100a collector-emitter breakdown voltage (note 8) v ( br ) ceo 50 v i c = 10ma emitter-base breakdown voltage v ( br ) ebo 5 v i e = 100a collector-base cutoff current i cbo 10 na v cb = 40v collector-emitter cutoff current i ces 10 na v ces = 40v emitter cutoff current i ebo 10 ?na v eb = 4v dc current gain (note 8) h fe 200 300 200 75 20 420 450 350 130 60 i c = 10ma, v ce = 2v i c = 100ma, v ce = 2v i c = 500ma, v ce = 2v i c = 1a, v ce = 2v i c = 1.5a, v ce = 2v collector-emitter saturation voltage (note 8) v ce(sat) 24 60 120 160 35 80 200 270 mv mv mv mv i c = 100ma, i b = 10ma i c = 250ma, i b = 10ma i c = 500ma, i b = 10ma i c = 1a, i b = 50ma base-emitter saturation voltage (note 8) v be ( sat ) 940 1100 mv i c = 1a, i b = 50ma base-emitter turn-on voltage (note 8) v be ( on ) 850 1100 mv i c = 1a, v ce = 2v output capacitance c obo 10 pf v cb = 10v. f = 1mhz current gain-bandwidth product f t 215 mhz v ce = 10v, i c = 50ma f = 100mhz turn-on time t on 150 ns v cc = 10v, i c = 1a i b1 = -i b2 = 100ma turn-off time t off 425 ns notes: 8. measured under pulsed conditions. pulse width 300 s. duty cycle 2%
ZXTD2090E6 document number ds31896 rev. 2 - 2 4 of 6 www.diodes.com august 2009 ? diodes incorporated a product line o f diodes incorporated z x td2090e6 dual 50v npn silicon low saturation switching transistor typical characteristics
ZXTD2090E6 document number ds31896 rev. 2 - 2 5 of 6 www.diodes.com august 2009 ? diodes incorporated a product line o f diodes incorporated z x td2090e6 dual 50v npn silicon low saturation switching transistor package outline dimensions suggested pad layout
ZXTD2090E6 document number ds31896 rev. 2 - 2 6 of 6 www.diodes.com august 2009 ? diodes incorporated a product line o f diodes incorporated z x td2090e6 dual 50v npn silicon low saturation switching transistor important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to ma ke modifications, enhancements, im provements, corrections or ot her changes without further notice to this doc ument and any product described herein. diodes incorporated does not assume any liabi lity arising out of the application or use of this document or any produc t described herein; neither does diodes incorporated convey any lic ense under its patent or trademark rights, nor the rights of others. any customer or user of this docum ent or products described herein i n such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated w ebsite, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customer s shall indemnify and hold diodes incorporated and its representatives harmless against all claims, dam ages, expenses, and attorney fee s arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicati on. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or mo re united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical co mponents in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to resu lt in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible fo r all legal, regulatory and safety-related requirements concerning their products and any use of diodes incorporated products in such safety-critical, lif e support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of di odes incorporated products in such safety- critical, life support devices or systems. copyright ? 2009, diodes incorporated www.diodes.com
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